Poster Session
Presentation guideline
The poster session will be held over two days.
At least one of the authors must stay in front of the poster during the assigned Core-Time:
† Core time Day 1: 11:40 – 13:00 on Nov. 13
‡ Core time Day 2: 11:40 – 13:00 on Nov. 14
Etching Technology
- †P1-01 Nobuya Mineyuki
Effects of process parameters on maskless nanostructure fabrication using atmospheric-pressure CF4 plasma
- †P1-02 Kyung Lim Kim
Plasma Etching Characteristics of SiNx/SiOx Using Low-GWP Alternatives to CHF3
- †P1-03 Violeta Georgieva
Pressure-Controlled SoC Etch-Back for Precise Vertical Patterning in CFET Dual WFM Module
- †P1-04 Tomoyuki Nonaka
OES of C4F8 plasma in Bosch process and investigation of passivation film properties
- †P1-05 Dae Yeon Ha
A Study on Enhancing LER and EUV PR/SiON Selectivity via Grid Pulsing in an Ion Beam System
- †P1-06 Ju Liang He
VHF-CCP Plasma Drilling for Fabricating ABF Micro-vias
- †P1-07 Yuki Tatsumi
Investigation of systematic ellipse direction in high aspect ratio memory hole etching
- †P1-08 Byeong-Yeop Choi
Characterization of Directional Ion Beam Etching under Pulsed Substrate Bias in Low-Pressure CCP
- †P1-09 Yanan Li
Dry Etching Development for Gate Fabrication of Si Spin Qubit Devices
- ‡P2-01 Donghyeon Seo
Cyclic Etching of TiO2 using Surface Fluorination with C4F8 Plasma and Removal with O2 Plasma
- ‡P2-02 Subhobroto Choudhury
Top Passivation in Dry Etch for CFET devices
- ‡P2-03 Woobeen Lee
Effect of Independently Controlled Plasma Parameters on SiO2 Etching in an RPS-Enhanced Dual-Frequency CCP
- ‡P2-04 Myeongho Park
Temperature-Dependent Etching Behavior of SiO2 and SiNx Using ACL Mask in HF Plasma
- ‡P2-05 Yusuke Imai
Influence of CF4 addition to HF plasma on the etching characteristics of SiO2, SiN and a-C films
- ‡P2-06 Jiwon Jeong
Time-Dependent Plasma Etching: Control of Aspect Ratio-Dependent Surface Reactions for Vertical HAR Profiles
- ‡P2-07 Takashi Yamaha
Impacts of mask profile and ON etching condition on notching defect at pattern boundary in HAR etching
- ‡P2-08 Hakseung Lee
Low Temperature Etch of Silicon Oxide and Silicon Nitride using CF4 Plasma
- ‡P2-09 Tran Trung Nguyen
Reaction surface analysis of plasma etching of SiN, SiO2, and poly-Si films using low-global warming potential CF3CHCF2 gas
- ‡P2-10 Sun Jeong Hwang
Spatio-temporal Control of Ion Energy and Angular Distributions in a Pulse-Modulated Dual Frequency Capacitive Coupled Plasma System
Manufacturing Technologies (AEC, APC, EES, FDC)
- †P1-11 Jeong Eun Jeon
Data-Driven Approach to Alleviate OES Spectral Distortion Caused by Viewport Contamination in Plasma Process
- ‡P2-11 Nozomi Kida
Interaction of sapphire surfaces with radicals derived from NF3 plasma
Surface Reaction and Damage
- †P1-12 Kakuto Watanabe
Effect of plasma-generated gas pressure on isocyanate group functionalization on Multi-walled Carbon Nanotubes
- †P1-13 Takuma Yanagisawa
Etching characteristics of Tungsten (W) by energetic reactive ions
- †P1-14 Seon Ho Jang
Magnetic Field-Enhanced Surface Cleaning in Transformer Coupled Plasma Systems
- †P1-15 Mizuki Yano
Investigation of structural changes in gate stack interfaces induced by nitrogen radical post-treatment
- ‡P2-12 Honoka Kido
Effect of nitrogen radical post-treatment on degradation of high-k gate dielectrics induced by constant current stress
- ‡P2-13 Shunya Yamamoto
Mechanical properties and NF3/Ar and Cl2/Ar plasma irradiation behavior of Y-Al-O based ceramics
- ‡P2-14 Masanori Shinohara
Substrate temperature effects on deposition process of Sicontaining amorphous carbon film during tetramethylsilane(Si(CH3)4) plasma, investigated by infrared spectroscopy
- ‡P2-15 Pierre Vinchon
Defect generation mitigation in plasma-irradiated monolayer graphene
Plasma Diagnostics and Monitoring Systems
- †P1-16 Junsoo Lee
In-situ Chamber Cleaning Endpoint Detection using QCM for O2 Plasma Cleaning of Fluorocarbon Polymer
- †P1-17 Daniel Zuhayra
A combined sensor for the diagnostic of particle and energy fluxes in process plasmas
- †P1-18 Sanghee Han
Etching Uniformity Monitoring using Spatially Resolved Endpoint Detection via Multi-Channel Optical Emission Spectroscopy
- †P1-19 Myeong Seok Seo
Effect of C4F6/C4F8 Gas Ratio on SiO2 Etch Profile in Triple-Frequency CCP Etcher
- †P1-20 Yunsang Lee
Plasma Process Chamber Status Monitoring During the Plasma-Off State
- †P1-22 Joichiro Mieda
Prediction of electron density and energy distribution function from optical emission spectroscopy
- †P1-23 Ping-Yen Hsieh
Spatial Langmuir Probe Analysis of the Argon Plasma in a VHF-CCP system
- †P1-24 Kotaro Takahashi
Prediction Method of Mass Spectrum of Neutral Species Spectrum by Optical Emission Spectroscopy Using Machine Learning
- ‡P2-16 Takuya Kikuchi
Charge Accumulation at the Bottom of High Aspect Ratio Holes under a Negative Pulse Voltage Application
- ‡P2-17 Yuchen Ye
Effects of Bias Power on EEPFs near the Substrate in Argon ICP Measured by a Langmuir Probe
- ‡P2-18 Zoltan Donko
Exploration of the characteristics of helium CCPs by Laser-Collision Induced Fluorescence and hybrid discharge simulations
- ‡P2-19 HyunKeun Park
Correlation Between Reflection Coefficient and Plasma Uniformity in Capacitively Coupled Plasma (CCP)
- ‡P2-20 Kanghyuk Seo
Non-Invasive Real-Time Sheath Diagnostics in Transformer Coupled Plasma-Reactive Ion Etch System
- ‡P2-21 Simon Chouteau
Line-specific radiation transport simulation in spatially non-uniform argon plasmas for self-consistent collisional-radiative modeling
- ‡P2-22 Shohei Nanya
Measurement of oxygen atom density distribution above a silicon substrate and estimation of surface loss probability
- ‡P2-23 Ying Hung Chen
OES Study of the ABF Plasma Etching in a VHF-CCP system
Computational Approaches (Modeling, Simulation, Machine Learning, AI, Informatics, DX) for Dry Process
- †P1-25 Kazuki Denpoh
Monte Carlo simulation of fast neutrals produced and transported in gas mixture plasma sheath
- †P1-26 Mariana Ribeiro
Towards more precise number density determination via iterative actinometry: the case of CF4-based plasmas
- †P1-28 Shuto Tsuchioka
Quantitative analysis of fluorine and oxygen species fluxes for precise profile control of Si etched structures
- †P1-30 Sarah Alamri
Comprehensive Study of RF-driven Capacitively Coupled Argon Plasmas: Comparison Between Numerical Simulation and Experiments
- †P1-31 Sukma Wahyu Fitriani
Optical emission spectroscopy and machine learningbased growth control of a-C:H films deposited via C2H2/Ar/He plasma CVD
- †P1-32 Kazumasa Ikuse
Development of Machine-learning Interatomic Potentials for Molecular Dynamics Simulations on Silicon and Silicon Dioxide Etching CVD
- †P1-33 Laxminarayan L. Raja
Machine Learned 1D Model for Fast and Accurate Simulations of Very Low Pressure Capacitively Coupled Discharges
- ‡P2-24 Alexey P. Milenin
Light Spectral Reflectivity Modelling by Means of the Transfer Matrix Method Applied in RIE
- ‡P2-25 Seiji Yoshikawa
Effect of radical reactions on the process uniformity in a showerhead-type plasma reactor
- ‡P2-26 Yoshihisa Osano
Raman-Guided PLS Modeling for Machine-Learning Optimization of DLC Films deposited by RF-PECVD
- ‡P2-27 Gregory Hartmann
Computational exploration of narrow gap transmission of reactive species
- ‡P2-28 Ana Jo
Real-time Prediction of Electric Resistance in Inline Manufacturing
- ‡P2-29 Sang-Woo Kim
Investigation of Neutral Gas Heating Effects in Inductively Coupled Ar/O2 Plasma
- ‡P2-30 Nicolas Mauchamp
Molecular dynamics (MD) simulations of cryogenic etching of SiO2 surfaces by HF plasmas
- ‡P2-31 Hitoshi Sogabe
Comparative study of approximation methods in simulating atmospheric pressure plasma jet
- ‡P2-32 Seoi Choi
Analysis of embedded electrode effects on sheath and ion energy and angle distributions in capacitively coupled plasma using 2D PIC simulation
- ‡P2-33 Eunseo Lee
Neural Network-Based Prediction of Sputtering Yield in DC Magnetron Sputtering
Plasma Generation (Equipment/Source)
- †P1-34 Hyojeong Seo
Durability of ALD Y2O3 and YAG Coatings under H₂/N₂ Plasma
- †P1-35 Seohui Jang
Numerical validation of the extended Paschen’s law via d/R scaling using 2D fluid simulations
Deposition Technologies (CVD / PVD)
- †P1-36 Michiko Sasaki
Optimization of thermoelectric properties of titanium nitride films prepared by combinatorial sputter coating system
- †P1-37 Tomoya Inoue
Photocatalytic Enhancement of WS2/Au/TiO2/Au Nanostructured Film under General Lighting Irradiation
- †P1-38 Akihisa Ogino
Hydrogenation of Sodium Metaborate Using Low-pressure Hydrogen Mixed Gas Plasma
- †P1-39 Taketo Nagata
Low-temperature deposition of IGZO using high-power impulse magnetron sputtering
- †P1-40 Yuto Yonehara
Effect of the first growth layer in nitrogen-doped diamond thin film synthesis using a two-step plasma-enhanced chemical vapor deposition process
- †P1-41 Koki Yoshida
Mechanistic Understanding and Kinetic Modeling of SiC-CVI Based on Atomic-scale Surface Reactions Toward Process Design — A Multiscale Approach Bridging Atomistic Insight and Reactor-scale Optimization
- †P1-42 Tetsuo Kawanabe
SiO Coating Characterization for Particle Reduction in ECR Etch Chambers
- ‡P2-35 Tsukasa Kawabe
Impact of Temperature on Structural and Mechanical Properties of Silicon Carbon Nitride Films by RF-PECVD
- ‡P2-36 Rikiya Matsushima
Uniform Monolayer MoS2 Continuous Film Growth by Low-Pressure CVD for Energy Harvesting
- ‡P2-37 Kotaro Watanabe
CVD synthesis of vertical Nb12O29 nanowires for surface-enhanced Raman scattering
- ‡P2-38 Daiki Horikawa
Deposition of indium oxide film by high-power impulse magnetron sputtering
- ‡P2-39 Tomoki Iwata
Effect of source-gas-decomposition using plasma on mist chemical vapor deposition for gallium oxide film
- ‡P2-40 Kosuke Takenaka
Deposition of Ga-based amorphous oxide thin film via plasma-assisted reactive processes for thin-film transistor fabrication
- ‡P2-41 Ryotaro Kito
The Role of Fluorine in MoS2 Synthesis on Fluorine terminated substrate
Atomic Layer Processes (ALD/ALE)
- †P1-43 Lucas Spiske
Surface reaction analysis of thermal ALE of transition metal oxides with acetylacetonate ligands
- †P1-44 Satoshi Hamaguchi
DFT Study on PE-ALD of Crystalline MoS2 on SiO2 Substrates
- †P1-45 Shunya Hirai
Surface reactions on thermal-cyclic etching (ALE) of titanium nitride (TiN) observed using in-situ X-ray photoelectron spectroscopy (XPS)
- ‡P2-42 Kazuhiro Miwa
Directional Cyclic Etching of Pt Film using O2 Plasma and Subsequent Formic Acid Vapor Treatment
- ‡P2-43 Genki Hayashi
Adsorption Selectivity Study of Trimethylaluminum (TMA) on Si, SiO2 and SiN surfaces using DFT calculation and XPS measurement
- ‡P2-44 Jomar U. Tercero
Computational insights on the influence of ion energy distributions in ALE of Si-based materials
- ‡P2-45 Akimasa Nakashima
Development of high-quality Nb thin films using plasma-enhanced atomic layer deposition process
Dry process for Green Transformation: GX (Energy saving technology, Alternative gas, Sustainability)
- †P1-46 Hyuck Byun
Enhancement of Chamber Dry-cleaning Performance with Nitrous Oxide Additive to Carbonyl Fluoride
- †P1-47 Kotaro Kunimoto
ZnO Nanoparticles Annealed with Chitosan for Enhanced Photodegradation of Persistent Substances
- †P1-48 Byunghyang Kwon
Development of a Low-GWP Chamber Cleaning Gas: Nitrosyl Fluoride (FNO)
- †P1-49 Charisse Cagomoc
Novel Fluorinated Compound with Low GWP for Sustainable Plasma Etching
- ‡P2-46 Seyun Jo
Alleviating Chemisorption of Oxidizer on SiO2 Thin Film After COF2-based In-situ Dry-Cleaning
- ‡P2-47 Akihide Sato
Effect of C4F8 Isomers on High Aspect Ratio Contact SiO2 Etching
- ‡P2-48 Kanata Okamoto
Plasma treatment of iron phthalocyanine-supported graphene oxide
Plasma Processes for Biological and Medical application, MEMS
- †P1-50 Kazuki Tange
Analysis of Liquid Surface Profile's Effect on Plasma Gene Transfection Using an Equivalent Circuit Network
- †P1-51 Kirara Yamanaka
Improvement of the functionality of a water plasma sterilization device using silica gel
- †P1-52 Taiki Hirohata
Modeling Discharge Current Characteristics in Dielectric Barrier Discharge for Molecular and Gene Introduction
- ‡P2-50 Takaaki Tsuchitori
Temporal Changes in Mitochondrial Membrane Potential in C. gracilis after Plasma Treatment
- ‡P2-51 Yoshihito Yagyu
Novel underwater plasma source with porous membrane: ROS transportation and effects on human cancer cells
- ‡P2-52 Omar Karim Chehaba
Quantifying the Electrical Stimulation of Surface Discharge Plasma for Molecular Introduction Using Equivalent Circuit Analysis
Atmospheric Pressure Plasma and Liquid Plasma
- †P1-53 Naoya Takagi
Photocatalytic Characteristics of ZnO Nanoparticles Simultaneously Treated via Annealing and Atmospheric-Pressure Low-Temperature Air Plasma
- †P1-54 Tatsuru Shirafuji
Surface-launched plasma bullets in argon gas ~ Their propagation velocity ~
- ‡P2-53 Jun Enomoto
Dependence of Electron Temperature and Density on the Device Type for Atmospheric-Pressure Non-Equilibrium Argon Plasma
New Dry Process Concepts
- †P1-55 Seunghyeon Hong
Photoresist Strip Processes using 172 nm Excimer UV with H2O
- ‡P2-54 Masahiro Goto
Thermal property of Bi/COH superlattice fabricated by combination of combinatorial sputter coating and pulse injection