Keynote / Invited Speakers
Nishizawa Award Lectures
- Steven M. George (University of Colorado)
"New Mechanisms for Metal Thermal Atomic Layer Etching" - Tetsuya Tatsumi (Sony Semiconductor Solutions Corporation)
"Quantitative control of plasma and surface reaction in dielectric film etching"
Keynote speaker
- Atsuyoshi Koike (Rapidus Corporation)
"Rapidus’s Challenge Towards Mass Production of 2nm Logic Semiconductors - Aiming for a Greener Manufacturing Process -"
Invited speakers and titles
AS1. Breakthrough process technology for advanced logic device fabrication
- John C. Arnold (IBM)
"Etch Processes for Advanced Logic in the Post-FinFET Era" - Ilgyo Koo (imec)
"Breakthrough process technology for advanced logic device fabrication"
AS2. Atomic layer processes (ALE/ALD/ASD) for ultimate control of surface reaction
- Christophe Vallee (University at Albany)
"Engineering plasma for atomic scale processing: ALD, ALE and ASD"
AS3. Understanding the mechanisms for future high-aspect-ratio etching technology
- Julian Schulze (Ruhr University Bochum)
"Knowledge based plasma control concepts for etching" - Kukhan Yoon (Samsung Electronics Co., Ltd.)
"Challenges and Solutions for Fine Pitch High Aspect Ratio Contact Patterning in Sub 10nm DRAM"