DPS 2019 41st International Symposium on Dry Process



The 41st International Symposium on Dry Process (DPS2019) will be held at JMS Aster Plaza, Hiroshima in Japan, from November 21 to 22, 2019. The Symposium covers all aspects of the rapidly evolving fields of dry processes, including but not limited to plasma etching and deposition processes, diagnostics and modeling of plasmas and surfaces, and surface modifications by plasmas, for the applications in, e.g., microelectronics, power devices, sensors, environmental protection, biological systems, and medicine. The DPS has provided valuable forums for in-depth discussion among professionals and students working in this exciting field for more than three decades.

Important dates

Abstract Submission Deadline: July 19, 2019
Early Registration Deadline: October 11, 2019
Late Registration Deadline (Online): October 31, 2019

Recent Updates

Feb .09, 2019
DPS2019 website open.

News for the Special Issues of Japanese Journal of Applied Physics (JJAP).

IF for the special issue of DPS in JJAP

1.67 (2017)


Regular Papers

DPS paper award that is given to excellent papers in the recent special issues of “Dry Process”, and the article is set “Open Access” for ever.

DPS2018 DPS Paper Award: "Atomic layer etching of silicon nitride using infrared annealing for short desorption time of ammonium fluorosilicate",
Nobuya Miyoshi, Hiroyuki Kobayashi, Kazunori Shinoda, Masaru Kurihara, Tomoyuki Watanabe, Yutaka Kouzuma, Kenetsu Yokogawa, Satoshi Sakai, Masaru Izawa
JJAP, 56(2017), 06HB01

DPS2017 DPS Paper Award: "Highly selective etching of LaAlSiOx to Si using C4F8/Ar/H2 plasma",
Sasaki, Toshiyuki; Matsuda, Kazuhisa; Omura, Mitsuhiro; Sakai, Itsuko; Hayashi, Hisataka
JJAP, 54(2015), 06GB03

DPS2016 DPS Paper Award: "Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion",
Kinoshita, Keizo; Honjo, Hiroaki; Fukami, Shunsuke; et al.
JAPP, 53(2014), 03DF03

DPS2015 DPS Paper Award: "Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors",
Eriguchi, Koji; Matsuda, Asahiko; Takao, Yoshinori; et al.
JJAP, 53(2014), 03DE02

Progress Reviews

Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?”,
Kenji Ishikawa, Kazuhiro Karahashi, Tatsuo Ishijima, Sung Il Cho, Simon Elliott, Dennis Hausmann, Dan Mocuta, Aaron Wilson and Keizo Kinoshita

In conjunction with