| Chair: |
M. Matsui (Hitachi, Ltd.) Japan |
| Vice-chair: |
M. Honda (TOKYO ELECTRON MIYAGI LTD.) Japan |
| H. Akatsuka (Tokyo Institute of Technology) Japan |
| K. Eriguchi (Kyoto University) Japan |
| M. Fukasawa (Sony Semiconductor Solutions Corp.) Japan |
| H. Hayashi (Daikin Industries, Ltd.) Japan |
| S. Higashi (Hiroshima University) Japan |
| M. Hori (Nagoya University) Japan |
| T. Ichiki (The University of Tokyo) Japan |
| K. Ishikawa (Nagoya University) Japan |
| K. Karahashi (Osaka University) Japan |
| K. Kinoshita (AIO Core Co., Ltd.) Japan |
| K. Koga (Kyushu University) Japan |
| H. Kokura (Tokyo Electron Ltd.) Japan |
| T. Koshizawa (Applied Materials Inc.) USA |
| K. Kurihara (KIOXIA Corp.) Japan |
| M. Kurihara (Hitachi, Ltd.) Japan |
| T. Maruyama (Renesas Electronics Corp.) Japan |
| Y. Morikawa (ULVAC Inc.) Japan |
| M. Nakatani (Panasonic Industry Corp.) Japan |
| T. Ohba (Lam Research Corp.) Japan |
| D. Ogawa (Chubu University) Japan |
| M. Omura (KIOXIA Corp.) Japan |
| K. Satoh (Muroran Institute of Technology) Japan |
| T. Shirafuji (Osaka Metropolitan University) Japan |
| M. Shiratani (Kyushu University) Japan |
| K. Takeda (Meijo University) Japan |
| T. Tatsumi (Sony Semiconductor Solutions Corp.) Japan |
| M. Terahara (Western Digital Corp.) Japan |
| H. Toyoda (Nagoya University) Japan |
| T. Watanabe (Waseda University) Japan |
| Chair: |
T. Ohba (Lam Research Corp.) Japan |
| Vice-chair: |
M. Omura (KIOXIA Corp.) Japan |
| Vice-chair: |
Y. Morikawa (ULVAC Inc.) Japan |
| A. Abe (Sony Semiconductor Manufacturing Corp.) Japan |
| K.H. Bai (Samsung Electronics Co., Ltd.) Korea |
| R. L. Bruce (IBM Corp.) USA |
| Y. Daigo (Tokyo Electron Ltd.) Japan |
| E. Despiau-Pujo (CNRS/University of Grenoble Alpes) France |
| R. Dussart (CNRS/Université d'Orléans) France |
| A. Dzarasova (Quantemol Ltd.) UK |
| D.J. Economou (University of Houston) USA |
| S. U. Englemann (IBM Corp.) USA |
| M. Fukasawa (Sony Semiconductor Solution Corp.) Japan |
| I. P. Ganachev (Shibaura Mechatronics Corp.) Japan |
| K. Hattori (Nagoya University) Japan |
| N. Hayashi (Kyushu University) Japan |
| T. Hayashi (Nagoya University) Japan |
| S. Higashi (Hiroshima University) Japan |
| M. Hiramatsu (Meijo University) Japan |
| M. Honda (TOKYO ELECTRON MIYAGI LTD.) Japan |
| T. Ichiki (The University of Tokyo) Japan |
| K. Ishikawa (Nagoya University) Japan |
| Y. Ishii (Hitachi High Technologies America, Inc.) USA |
| S. Kanakamedala (Western Digital Corp.) USA |
| S. Y. Kang (Samsung Electronics Co., Ltd.) Korea |
| K. Karahashi (Osaka University) Japan |
| K. Koga (Kyushu University) Japan |
| H. Kokura (Tokyo Electron Ltd.) Japan |
| H. Kondo (Kyushu University) Japan |
| A. Koshiishi (Samsung Electronics Co., Ltd. ) Korea |
| T. Koshizawa (Applied Materials Inc.) USA |
| N. Kuboi (Sony Semiconductor Solutions Corp.) Japan |
| K. Kurihara (KIOXIA Corp.) Japan |
| M. Kurihara (Hitachi, Ltd.) Japan |
| T. Maruyama (Renesas Electronics Corp.) Japan |
| M. Matsui (Hitachi, Ltd.) Japan |
| S. Miyazaki (Nagoya University) Japan |
| H. Miyazoe (IBM Corp.) USA |
| M. Morimoto (Hitachi High-Tech Corp.) Japan |
| K. Nakamura (Chubu University) Japan |
| M. Nakamura (MAMO) Japan |
| S. Nunomura (Advanced Industrial Science and Technology -AIST) Japan |
| S. Okita (Panasonic Connect Co., Ltd.) Japan |
| M. Ohryoji (Western Digital Corp.) Japan |
| M. Ohuchi (Micron Memory Japan, K.K.) Japan |
| H. Ohtake (Hitachi High-Tech Corp.) Japan |
| J-C. Park (Samsung Electronics Co., Ltd.) Korea |
| E. Pargon (LTM-CNRS) France |
| F. Roozeboom (University of Twente) Netherlands |
| T. Seki (Kyoto University) Japan |
| Y. Setsuhara (Osaka University) Japan |
| P. Shen (Air Liquide Japan, Ltd.) Japan |
| Y. Shimogaki (The University of Tokyo) Japan |
| T. Shirafuji (Osaka Metropolitan University) Japan |
| M. Shiratani (Kyushu University) Japan |
| E. Stamate (Technical University of Denmark) Denmark |
| K. Takahashi (Kyoto Institute of Technology) Japan |
| K. Tapily (TEL Technology Center America) USA |
| M. Terahara (Western Digital Corp.) Japan |
| M. Titus (The University of Arizona) USA |
| H. Toyoda (Nagoya University) Japan |
| J. H. Um (Samsung Electronics Co., Ltd.) Korea |
| T. Watanabe (Waseda University) Japan |
| M. Yamada (Hitachi, Ltd.) Japan |
| G-Y. Yeom (Sungkyunkwan University) Korea |
| T-Y Yu (TSMC) Taiwan |